Research Opportunities for Students

Information on requirements

Currently accepting:

Graduate: Yes

Undergraduate: Yes

1. 1. Is it Paid? – Yes
   2. In a lab? – Yes
   3. Prerequisites – required: AST 2002, PHY 2048. preferred: PHZ 3150 and/or AST 4762 and/or PHZ 3151.
   4. Learning materials

Publications

‪Leonid Chernyak‬ – ‪Google Scholar‬

1. L. Chernyak, J. Vedel and D. Cahen (1996) Voltage-Driven Doping of Mixed
   Ionic Electronic Semiconductors, Solid State Ionics, 83, 29-33.
2. N.S. McAlpine, P. McConville, D. Haneman, L. Chernyak, and D. Cahen (1996) Junction Sharpness in Field-induced Transistor Structures in Cu_xAg_1-xInSe₂, J. Appl. Phys., 79, 7370-7372.
3. L. Chernyak, V. Lyakhovitskaya, S. Richter, A. Jakubowicz, J. Manassen, S. Cohen and D. Cahen (1996) Electronic Effects of Ion Mobility in Semiconductors. Mixed Electronic Ionic Behaviour and Device Creation in, J. Appl. Phys., 80, 2749-2762.
4. L. Chernyak, V. Lyakhovitskaya, and D. Cahen (1996) Low Temperature Device Creation in Ternary Chalcogenide Semiconductors via Thermally Assisted Electromigration of Native Dopants, in Proc. ICTMC-10 Crystal Res. & Technol., 31, 163-167.
5. L. Chernyak, A. Osinsky, H. Temkin, J.W. Yang, Q. Chen, and M. Asif Khan (1996) Electron Beam Induced Current Measurements of Minority Carrier Diffusion Length in Gallium Nitride, Appl. Phys. Lett., 69, 2531-2533.
6. Osinsky, L. Chernyak, H. Temkin, Y. Ch. Wen, and B.A. Parkinson (1996) Effect of Sulfur Doping on Optical Anisotropy of CdSiAs ₂, Appl. Phys. Lett., 69, 2867-2869.
7. J.W. Yang, C.J. Sun, Q. Chen, M.Z. Anwar, M. Asif Khan, S.A. Nikishin, G.A. Seryogin, A.V. Osinsky, L. Chernyak, H. Temkin, C. Hu, and S. Mahajan (1996) High Quality GaN-InGaN Heterostructures Grown On (111) Silicon Substrates, Appl. Phys. Lett., 69, 3566-3568.
8. L. Chernyak, A. Osinsky, H.Temkin, A. Mintairov, I.G. Malkina, B.N. Zvonkov, Yu. N. Safianov (1997) Anomalies of Transport Anisotropy in Spontaneously Ordered GaInP₂ Alloys, Appl. Phys. Lett., 70, 2425-2427.
9. David Cahen and Leonid Chernyak (1997) Dopant Electromigration in Semiconductors, Adv. Mater., 9, 861-876.
10. Konstantin Gartsman, Leonid Chernyak, Vera Lyahovitskaya, David Cahen, Vladimir Didik, Vitaliy Kozlovsky, Roald Malkovich, Elena Skoryatina, Valentina Usacheva (1997) Direct evidence for diffusion and electromigration of Cu in CuInSe₂, J. Appl. Phys., 82, 4282-4285.
11. Felix Frolow, Leonid Chernyak, David Cahen, Hanna Hallak, Jamal Gabboun, Ake Kvick, Heinz Graafsma (1998) Single crystal synchrotron X-ray diffraction of CuInSe₂, in Proc. ICTMC-11, Inst. of Phys. Conf. Ser., 152, 67-70.
12. V. Lyahovitskaya, L. Chernyak, J. Greenberg, L. Kaplan, D. Cahen (2000) n- and p-type post-growth self-doping of CdTe single crystals, J. Cryst. Growth, 214, 1155-1157.
13. V. Lyahovitskaya, L. Chernyak, J. Greenberg, L. Kaplan, D. Cahen (2000) Low temperature, post-growth self-doping of CdTe single crystals due to controlled deviation from stoichiometry, J. Appl. Phys., 88, 3976-3981.
14. Leonid Chernyak, Andrei Osinsky, Vladimir Fuflyigin, E.F. Schubert (2000) Electron Beam-Induced Increase of Electron Diffusion Length in p-type GaN and AlGaN/GaN superlattices, Appl. Phys. Lett., 77, 875-877.
15. L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental – Weber, D.C. Look, R.J. Molnar (2000) Electron beam and optical depth-profiling of quasi-bulk GaN, Appl. Phys. Lett., 77, 2695-2697.
16. Leonid Chernyak, Andrei Osinsky, Vladimir Fuflyigin, E.F. Schubert (2001) Minority Electron Transport Anisotropy in p-type Al_xGa_1-xN/GaN superlattices, IEEE Trans. Electron. Devices, 48, 433-437.
17. Leonid Chernyak, David Cahen (2001) Electric Field-Induced Tuning of Semiconductor Optoelectronic Properties, Deffect Diffus. Forum, 191, 61-97.
18. Leonid Chernyak, Jamal Ghabboun, Vera Lyahovitskaya, David Cahen (2001) Electric field-induced fabrication of microscopic, Si-based optoelectronic devices for 1.55 & 1.16 mm IR electroluminescence, Materials Science Eng. B, 81, 113-115.
19. L. Chernyak and M. Klimov (2001) Nano-scale p-n junction fabrication in Silicon due to controlled dopant electromigration Appl. Phys. Lett., 78, 1613-1615.
20. L. Chernyak, G. Nootz, A. Osinsky (2001) Enhancement of minority carrier transport in forward biased GaN p-n junction Electron. Lett., 37, 922-923.
21. L. Chernyak, A. Osinsky, S.J. Pearton, F. Ren (2001) Phototransistor measurements in AlGaN/GaN HBTs Electron. Lett., 37, 1411-1412.
22. L. Chernyak, A. Osinsky, A. Schulte (2001) Minority carrier transport in GaN and related compounds Solid State Electron., 45,1687-1702.
23. L. Chernyak (2002) Studies of electron injection-induced effects in III-Nitrides Wide Bandgap Semiconductor for Photonic and Electronic Devices and Sensors II, ECS, 178-183.

Publications after joining UCF (2000-2015)

24. L. Chernyak, A. Schulte, A. Osinsky, J. Graff, E.F. Schubert (2002) Influence of electron injection on performance of GaN photodetectors Appl. Phys. Lett., 80, 926-928.
25. L. Chernyak, W. Burdett, A. Osinsky (2002) Study of temperature dependence for the electron injection-induced effects in GaN Appl. Phys. Lett., 81, 1633-1635.
26. W. Burdett, A. Osinsky, V. Kotlyarov, P. Chow, A. Dabiran, L. Chernyak (2003) Impact of Aluminum concentration and Magnesium doping on the effect of electron injection in p-Al_xGa_1-xN Solid-State Electron., 47, 931-935.
27. L. Chernyak, W. Burdett (2003) Electron injection-induced effects in GaN: Physics and Applications MRS Proceedings, 764, C5.4.
28. L. Chernyak, W. Burdett, M. Klimov, A. Osinsky (2003) Cathodoluminescence studies of the electron injection-induced effects in GaN Appl. Phys. Lett., 82, 3680-3682.
29. L. Chernyak, W. Burdett (2003) Physics of Electron Injection in III-Nitrides Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III, ECS, 196-200.
30. D.I. Florescu, S.M. Ting, J.C. Ramer, D.S. Lee, V.N Merai, A. Parkeh, D. Lu, E.A. Armour, L. Chernyak (2003) Atomic Force Microscopy and Scanning Electron Microscopy/Cathodoluminescence Investigation of V-Defects and Embedded Inclusions in InGaN/GaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on (0001) Sapphire Appl. Phys. Lett., 83, 33-35.
31. W. Burdett, L. Chernyak (2003) Cathodoluminescence studies of the electron injection-induced effects in III-Nitrides Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors IV, ECS, 208-213.
32. L. Chernyak, A. Schulte (2004) Method for performance improvement of photodetectors and solar cells U.S. Patent #6,674,064; January 6, 2004.
33. W. Burdett, O. Lopatiuk, A. Osinsky, S.J. Pearton, L. Chernyak (2004) Optical signature of electron injection in p-AlGaN Superlattices and Microstructures, 34, 55-62.
34. H. Temkin, S. A. Nikishin, M. Holtz, L. Chernyak (2004) Deep UV Light Emitting Diodes Based on Short Period Superlattices of AlN /AlGaN State-of-the-Art Program on Compound Semiconductors XL and Narrow Bandgap Optoelectronic Materials and Devices II, ECS, 1-6.
35. W. Burdett, O. Lopatiuk, L. Chernyak, M. Hermann, M. Stutzmann, M. Eickhoff (2004) Electron injection-induced effects in Mn-doped GaN J. Appl. Phys., 96, 3556-3558.
36. W. Burdett, O. Lopatiuk, L. Chernyak, M. Eickhoff (2004) Studies of electron trapping in III-Nitrides Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors V, ECS, 512-521.
37. A. Osinsky, J.W. Dong, M.Z. Kauser, B. Hertog, A.M. Dabiran, P.P. Chow, S.J. Pearton, O. Lopatiuk, L. Chernyak (2004) MgZnO/AlGaN Heterostructure Light Emitting Diodes Appl. Phys. Lett., 85, 4272-4274.
38. O. Lopatiuk, W. Burdett, L. Chernyak, K.P. Ip, Y.W. Heo, D.P. Norton, S.J. Pearton, B. Hertog, P.P. Chow, A. Osinsky (2005) Minority carrier transport in p-type Zn_0.9Mg_0.1O doped with phosphorus Appl. Phys. Lett., 86, 012105 (3 pages).
39. Alexander Y. Polyakov, Qiang Li, Olena Lopatiuk, Leonid Chernyak, Sung Wook Huh, Marek Skowronski, Edward Sanchez (2005) Minority Carriers Diffusion Length Measurements in 6H-SiC J. Appl. Phys., 97, 053703 (6 pages).
40. O. Lopatiuk, L. Chernyak, A. Osinsky, J.Q. Xie, P.P. Chow (2005) Lithium-related states as deep electron traps in ZnO Appl. Phys. Lett., 87, 214110 (3 pages).
41. O. Lopatiuk, A. Osinsky, A .Dabiran, K. Gartsman, I. Feldman, L. Chernyak (2005) Electron trapping effects in C- and Fe-doped GaN and AlGaN Solid-State Electronics, 49, 1662-1668.
42. O. Lopatiuk-Tirpak, W.V. Schoenfeld, L. Chernyak, F.X. Xiu, J.L. Liu, S. Jang, F. Ren, S.J. Pearton, A. Osinsky, P. Chow (2006) Carrier concentration dependence of acceptor activation energy in p-type ZnO Appl. Phys. Lett., 88, 202110 (3 pages).
43. O. Lopatiuk, A. Osinsky, L. Chernyak (2006) Minority carrier transport in ZnO and related materials, chapter in Zinc Oxide Bulk, Thin Films and Nanostructures, C. Jagadish and S. Pearton (Editors), Elsevier.
44. O. Lopatiuk-Tirpak, L. Chernyak, F.X. Xiu, J.L. Liu, S. Jang, F. Ren, S.J. Pearton, K. Gartsman, Y. Feldman, A. Osinsky, P. Chow (2006) Studies of Minority Carrier Diffusion Length Increase in p-type ZnO:Sb J. Appl. Phys., 100, 086101 (3 pages).
45. O. Lopatiuk-Tirpak, L. Chernyak, L.J. Mandalapu, Z. Yang, J.L. Liu, K. Gartsman, Y. Feldman, Z. Dashevsky (2006) Influence of electron injection on the photoresponse of ZnO homojunction diodes Appl. Phys. Lett., 89, 142114 (3 pages).
46. O. Lopatiuk-Tirpak, L. Chernyak, B.A. Borisov et. al. (2007) Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN/AlGaN short period superlattice Appl. Phys. Lett., 91, 182103 (3 pages).
47. O. Lopatiuk-Tirpak, L. Chernyak, Wang YL, et al. (2007) Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN Appl. Phys. Lett., 91, 092197 (3 pages).
48. O. Lopatiuk-Tirpak, L. Chernyak (2007) Studies of minority carrier transport in ZnO Superlattices and Microstructures 42, 201-205.
49. O. Lopatiuk-Tirpak, G. Nootz, E. Flitsiyan, L. Chernyak, et al. (2007) Influence of electron injection on the temporal response of ZnO homojunction photodiodes Appl. Phys. Lett., 91, 042115 (3 pages).
50. Y.I. Alivov, U. Ozgur, X. Gu, C. Liu, Y. Moon, H. Morkoc, O. Lopatiuk, L. Chernyak,
    C.W. Litton (2007) Hybrid II-VI and III-V compound double heterostructures and their properties J. Electron. Materials, 36, 409-413.
51. O. Lopatiuk-Tirpak, L. Chernyak, Y.L. Wang, et al. (2007) Cathodoluminescence studies of carrier concentration dependence for the electron- irradiation effects in p-GaN Appl. Phys. Lett., 90, 172111 (3 pages).
52. O. Lopatiuk, L. Chernyak, Y. Feldman, et al. (2007) Studies of electron trapping in GaN doped with carbon Thin Solid Films, 515, 4365-436.
53. O. Lupan, L. Chow, G.Y. Chai, L. Chernyak, O. Lopatiuk-Tirpak, H. Heinrich (2008) Focused-ion-beam fabrication of ZnO nanorod-based UV photodetector using the in-situ lift-out technique Physica Status Solidi A, 205, 2673-2678.
54. R.E. Peale, O. Lopatiuk, J. Cleary, S. Santos, J. Henderson, D. Clark, L. Chernyak, T.A.Winningham, E. Del Barco, H. Heinrich, W.R. Buchwald (2008)Propagation of high-frequency surface plasmons on gold J. of the Optical Society of America B, 25, 1708-1713.
55. O. Lupan, L. Chow, G. Chai, A. Schulte, S. Park, O. Lopatiuk-Tirpak, L. Chernyak, H. Heinrich (2008) Biopolymer-assisted self-assembly of ZnO nanoarchitectures from nanorods Superlattices and Microstructures, 43, 292-302.
56. Y.I. Alivov, B. Xiao, S. Akarca-Biyikli, Q. Fan, H. Morkoc, D. Johnstone, O. Lopatiuk- Tirpak, L. Chernyak, W. Litton (2008) Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods J. Phys.-Condensed Matter, 20, 085201.
57. L. Chernyak, C. Schwarz, E.S. Flitsiyan, K. Gartsman (2008) Electron beam induced current profiling of ZnO p-n homojunctions Appl. Phys. Lett., 92, 102106 (3 pages).
58. Robert Peale, Elena S Flitsiyan, Casey M Swartz, Oleg Lupan, Leonid Chernyak, Lee Chow, William Vernetson, Zinovi Dashevsky (2009) Neutron transmutation doping and radiation hardness for solution-grown bulk and nano- structured ZnO Performance and Reliability of Semiconductor Devices, MRS Proc., 1108, A05-03.
59. Y. Lin, E. Flitsyian, L. Chernyak, T. Malinauskas, R. Aleksiejunas, K. Jarasiunas, W. Lim, S.J. Pearton, K. Gartsman (2009) Optical and electron beam studies of carrier transport in quasibulk GaN Appl. Phys. Lett., 95, 092101 (3 pages).
60. Z. Dashevsky, V. Kasiyan, S. Asmontas, J. Gradauskas, E. Shirmulis, E. Flitsiyan, L. Chernyak (2009) Photothermal effect in narrow band gap PbTe semiconductor J. Appl. Phys., 106, 076105 (3 pages).
61. Z. Dashevsky, R. Kreizman, E. Shufer, V. Kasiyan, E. Flitsiyan, M. Shatkhin, L. Chernyak (2009) Nanocrystalline PbTe Films Journal of Nanoelectronics and Optoelectronics, 4, 1-6.
62. E. Shufer, Z. Dashevsky, V. Kasiyan, E. Flitsiyan, L. Chernyak, K. Gartsman (2010) Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films Physica B, 405, 1058-1061
63. L. Chernyak, E. Flitsiyan, M. Shatkhin, and Z. Dashevsky (2010) Studies of Electron Trapping in ZnO Semiconductor ECS Transactions, 28 (4), 3-11.
64. Z. Dashevsky, E. Shufer, V. Kasiyan, E. Flitsiyan and L. Chernyak (2010) Influence of oxygen treatment on transport properties of PbTe:In polycrystalline films, Physica B, 405 (10), 2380-2384.
65. E. Flitsyian, C. Schwarz, L. Chernyak, R.E. Peale, Z. Dashevsky, W. Vernetson (2011) Neutron Irradiation-Induced Enhancement of Electronic Carrier Transport in ZnO Radiation Effects and Defects in Solids,166 (2), 104-11.
66. Y. Lin, M. Shatkhin, E. Flitsiyan, L. Chernyak, Z. Dashevsky, S. Chu, J.L. Liu (2011) Minority carrier transport in p-ZnO nanowires J. Appl. Phys., 109, 016107 (3 pages).
67. P. Onufrijevs, T. Serevicius, P. Scajev, G. Manolis, A. Medvids, L. Chernyak, E. Kuokstis, C.C. Yang, K. Jarasiunas (2011) Characterization of Optical and Photoelectrical Properties of ZnO Crystals ACTA PHYSICA POLONICA A, 119 (2), 274-276.
68. G.P. Wang, S. Chu, N. Zhan, Y.Q. Lin, L. Chernyak, J.L. Liu (2011) ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection Appl. Phys. Lett., 98, 041107 (3 pages).
69. Casey Schwarz, Yuqing Lin, Max Shathkin, Elena Flitsiyan and Leonid Chernyak (2011) Cathodoluminescence studies of electron irradiation effects in n-type ZnO J. Phys.: Condens. Matter, 23, 334204.
70. S. Chu, G.P. Wang, W.H. Zhou, Y.Q. Lin, L. Chernyak, J.Z. Zhao, J.Y. Kong, L. Li, J.J. Ren, J.L. Liu (2011) Electrically pumped waveguide lasing from ZnO nanowires NATURE ANOTECHNOLOGY, 6 (8), 506-510.
71. C. Schwarz, E. Flitsiyan, L. Chernyak, V. Casian, R. Schneck, Z. Dashevsky, S. Chu, J.L. Liu (2011) Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires J. Appl. Phys., 110, 056108 (3 pages).
72. E. Flitsyian, Z. Dashevsky and L. Chernyak, “Minority carrier transport in ZnO and related materials”, in Advances in GaN and ZnO-based Thin Film, Bulk and N anostructured Materials and Device, ed. S.J. Pearton, Springer (2012).
73. C.F. Lo, L. Liu, T.S. Kang, F. Ren, C. Schwarz, E. Flitsiyan, L. Chernyak, H.Y. Kim, J. Kim, S.P. Yun, O. Laboutin, Y. Cao, J.W. Johnson, S.J. Pearton (2012) “Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation”, J. Vac. Sci. Technol., 30, 031202
74. V. Kasiyan, Z. Dashevsky, C.M. Schwarz, M. Shatkhin, E. Flitsiyan, L. Chernyak, D. Khokhlov (2012) “Infrared detectors based on semiconductor p-n junction of PbSe”, J. Appl. Phys., 112, 086101 (3 pages).
75. J. Huang, S. Chu, J.Y. Kong, L. Zhang, C.M. Schwarz, G.P. Wang, L. Chernyak, Z.H. Chen, J.L. Liu (2013) “ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires”, Advanced Optical Materials, 1 (2), 179-185.
76. C. Schwarz, A. Yadav, M. Shatkhin, E. Flitsiyan, L. Chernyak, V. Kasiyan, L. Liu, Y.Y. Xi, F. Ren, S.J. Pearton, C.F. Lo, J.W. Johnson, E. Danilova (2013) “Gamma irradiation impact on electronic carrier transport in AlGaN./GaN high electron mobility transistors”, Appl. Phys. Lett., 102, 062102 (3 pages).
77. Ya-Hsi Hwang, Yueh-Ling Hsieh, Lei Lei, Shun Li, Fan Ren, Stephen J. Pearton, Anupama Yadav, Casey Schwarz, Max Shatkhin, Luther Wang, Elena Flitsiyan, Leonid Chernyak, Albert G. Baca, Andrew A. Allerman, Carlos A. Sanchez and I. I. Kravchenko (2014) “Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors”, J. Vac. Sci. Technol., B 32, 031203.
78. Anupama Yadav, Casey Schwarz, Max Shatkhin, Luther Wang, Elena Flitsiyan, Leonid Chernyak, Lu Liu, Y.H. Hwang, Fan Ren, Stephen J.Pearton, and Igor Lubomirsky (2014) “Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors”, ECS Trans., 61 (4),171-177.
79. Ya-Hsi Hwang, Yueh-Ling Hsieh, L Lei, Shun Li, Fan Ren, Stephen J. Pearton, Anupama Yadav, Casey Schwarz, Max Shatkhin, L Wang, Elena Flitsiyan, Leonid Chernyak, Albert G Baca, A Allerman, Carlos A Sanchez, and I. I. Kravchenko (2014) “Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors”, ECS Trans., 61 (4), 205-210.
80. Elena Flitsiyan, Leonid Chernyak (2014) “Electron Injection Effects in Wide-Band-Gap Semiconductors”, Lambert Academic Publishing, 1-56.
81. Anupama Yadav, Elena Flitsiyan, Leonid Chernyak, Ya-Hsi Hwang, Yueh-Ling Hsieh, Lei Lei, Fan Ren, Stephen J. Pearton, and Igor Lubomirsky (2015) “Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors” MRS Proceedings, 1792, 2137760.
82. Anupama Yadav, Michael Antia, Elena Flitsiyan, Leonid Chernyak, Igor Lubomirsky and Joseph Salzman (2015) “Cathodoluminescence Studies of Gamma-Irradiation Effects on AlGaN/GaN High Electron Mobility Transistors (HEMTs)”, Electrochemical Society Transactions, 69, 14, 137144.
83. Anupama Yadav, Elena Flitsiyan, Leonid Chernyak, Ya-Hsi Hwang, Yueh-Ling Hsieh, Lei Lei, Fan Ren, Stephen J. Pearton, and Igor Lubomirsky (2015) “Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN High Electron Mobility Transistors”, RADIATION EFFECTS and DEFECTS IN SOLIDS: Incorporating Plasma Science and Plasma Technology”, 170, 5, 377-385.
84. Svetlana G. Egorova, Vladimir I. Chernichkin, Anna O. Dudnik, Vladimir A. Kasiyan, Leonid Chernyak, Sergey N. Danilov, Ludmila I. Ryabova, and Dmitry R. Khokhlov (2015) “Discrimination of conductive surface electron states by laser terahertz radiation in PbSe – a base for Pb1−xSnxSe topological crystalline insulators”, IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 5 (4), 659-664.

Publications after joining UCF (last five years)

85. Anupama Yadav, Cameron Glasscock, Elena Flitsiyan, Leonid Chernyak, Igor Lubomirsky, Sergey Khodorov, Joseph Salzman, Carlo Coppola, Sebestian Guay and Jasques Boivin (2016) “Optical and Electron Beam Studies of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors”, RADIATION EFFECTS and DEFECTS IN SOLIDS: Incorporating Plasma Science and Plasma Technology, 171, 1, 1-8.
86. Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, Shihyun Ahn, Fan Ren, Lin Yun, Stephen J. Pearton, Jihyun Kim, Boris Meyler and Joseph Salzman (2016) “Optical Signature of the Electron Injection in Ga₂O₃“, ECS J. Solid State Sci. Technol., 6, 2, Q3049-Q3051.
87. J. Lee*, E. Flitsiyan, L. Chernyak, J. Salzman, B. Meyler (2017) “Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors”, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 6 (11), S3063-S3066.
88. J.C. Yang, F. Ren, R. Khanna, K. Bevlin, D. Geerpuram, L.C. Tung, J.Y. Lin, H.X. Jiang, J. Lee*, E. Flitsiyan, L. Chernyak, S.J. Pearton, A. Kuramata (2017) “Annealing of dry etch damage in metallized and bare (-201) Ga₂O₃“, J. Vacuum. Sci. Technol., 35 (5), 051201.
89. J.C. Yang, Z.T. Chen, F. Ren, S.J. Pearton, G. Yang, J. Kim, J. Lee*, E. Flitsiyan, L. Chernyak, A. Kuramata (2018) “10 MeV proton damage in beta-Ga₂O₃ Schottky rectifiers”, J. Vacuum. Sci. Technol., 36 (1), 011206.
90. J. Lee, E. Flitsiyan, L. Chernyak, J.C. Yang, F. Ren, S. Pearton, B. Meyler, Y.J. Salzman (2018) “Effect of 1.5 MeV electron irradiation on beta-Ga₂O₃ carrier lifetime and diffusion length”, Appl. Phys. Lett., 112 (8), 082104.
91. Jonathan Lee, Chris Fredricksen, Elena Flitsiyan, Robert Peale, Leonid Chernyak, Zahra Taghipour, Lilian Casias, Alireza Kazemi, Sanjay Krishna, and Stephen Myers (2018) “Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices”, J. Appl. Phys., 123 (23), 235104.
92. S. Modak, J. Lee, L. Chernyak, J. Yang, F. Ren, S. J. Pearton, S. Khodorov and I. Lubomirsky (2019) “Electron injection-induced effects in Si-doped β-Ga₂O₃“, AIP Adv., 9, 1, 015127.
93. S. Modak, L. Chernyak, S. Khodorov, I. Lubomirsky, J. Yang, F. Ren and S. J. Pearton (2019) “Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated β-Ga₂O₃ Schottky Rectifiers”, ECS Journal of Solid State Science and Technology, 8, 7, Q3050-Q3053.
94. Sushrut Modak, Leonid Chernyak, Igor Lubomirsky, Sergey Khodorov,
    “Continuous and time-resolved cathodoluminescence studies of electron injection induced effects in gallium nitride”. Book chapter in Advanced Technologies for Security Applications – NATO Science for Peace and Security Cluster Workshop on Advanced Technologies, 17-18 September 2019, Leuven, Belgium.
95. L. CHERNYAK, R.E. PEALE, C.J. FREDRICKSEN, J. LEE Infraredsensor device Patent Number(s): US2019234803-A1.
96. Sushrut Modak, Leonid Chernyak, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, Minghan Xian, Fan Ren, Stephen J. Pearton (2020) “Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga₂O₃ Schottky Rectifiers”, ECS Journal of Solid State Science and Technology, vol. 9, article 045018.
97. B. Dzundza, L.Nykyruy, T. Parashchuk, E. Ivakin, Y. Yavorsky, L. Chernyak, Z. Dashevsky (2020) “Transport and thermoelectric performance of n-type PbTe films”, Physica B: Condensed Matter, vol. 588, article 412178.
98. Sushrut Modak, Leonid Chernyak, Minghan Xian, Fan Ren, Stephen Pearton, Sergey Khodorov, Igor Lubomirsky, Arie Ruzin, and Zinovi Dashevsky (2020) “Impact of Electron Injection on Carrier Transport and Recombination in Unintentionally Doped GaN”, J. Appl. Phys., 128, article 085702.
99. T. Parashchuk, L. Chernyak, S. Nemov, Z. Dashevsky (2020) “Influence of Deformation on Pb(1-x)In(x)Te(1-y)I(y)and Pb1-x-ySnxInyTe Films” PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Article Number: 2000304.
100. A. Brovko, A. Adelberg, L. Chernyak, S. Gorfman, A. Ruzin (2020) “Impact of polishing on crystallinity and static performance of Cd1-xZnxTe”, Nuclear Inst. and Methods in Physics Research A, 984, article 164568.
101. O. Kostyuk, B. Dzundza, M. Maksymuk, V. Bublik, L. Chernyak, Z. Dashevsky (2020) “Development of Spark Plasma Sintering (SPS) for preparation of nanocrystalline p-type Bi_0.5Sb_1.5Te₃ thermoelectric material”, J. Phys. Chem. of Solid State, 21, 628.
102. Jonas Gradauskas, Bohdan Dzundza, Leonid Chernyak, Zinovi Dashevsky (2021) “Detection of 9.5 μm CO₂ laser pulses in indium doped PbTe p-n junction”, Physica B, in press.
103. J. Gradauskas, B. Dzundza, L. Chernyak, Z. Dashevsky (2021) “Two-Color Infrared Sensor on the PbTe:In p-n junction”, Sensors 21, 1195.
104. S. Nemov, O. Kostyuk, B. Dzundza, L. Chernyak, Z. Dashevsky (2021) “High Perfection Bulk and Film Thermoelectrics Based on PbTe Doped by In”, Semiconductors, 55 (6), in press.
105. S. Nemov, B. Dzundza, L. Chernyak, Z. Dashevsky (2021) “Photovoltaic and thermal effects on PbTe p-n junction under CO₂ laser irradiation”, Semiconductors, 55 (9), in press.
106. A. Brovko, O. Amzallag, A. Adelberg, L. Chernyak, P.V. Raja, A. Ruzin (2021) “Effects of oxygen plasma treatment on CdTe material and devices”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, in press (available online April 20, 2021; https://doi.org/10.1016/j.nima.2021.165343).
107. M. Maksymuk, T. Parashchuk, B. Dzundza, L. Nykyruy, L. Chernyak, Z. Dashevsky (2021) “Development of the flexible film thermoelectric microgenerator based on Bi₂Te₃ alloys”, Materials Today Energy vol. 21, 100753; https://doi.org/10.1016/j.mtener.2021.100753
108. Sushrut Modak, Leonid Chernyak, Alfons Schulte, Minghan Xian, Fan Ren, Stephen J. Pearton, Igor Lubomirsky, Arie Ruzin, Sergey S. Kosolobov, Vladimir P. Drachev (2021) “Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga₂O₃ Schottky rectifiers”, Appl. Phys. Lett., vol. 118 (20), May 17, 2021. DOI: 10.1063/5.0052601

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Awards

UCF Team to Receive Revolutionary Microscope

The fastest detecting and most advanced electron microscope in the world is coming to the Department of Physics thanks to researchers at the University of…

Anthropology

COS Faculty Receive Incentive Awards

The College of Sciences is proud to announce the 2015-2016 winners for the Teaching Incentive Program and Research Incentive Award. Each year, UCF’s Academic Affairs’…